Laser Diode

Description

A laser diode, (LD) is a semiconductor device similar to a light-emitting diode in which the laser beam gets generated at the diode’s junction.Laser diodes can directly convert electrical energy into light. Driven by voltage, the doped p-n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission. Stimulated emission can be produced when the process is continued and further generate light with the same phase, coherence and wave length.

Features:
•    RoHS (Restriction of Hazardous Substances) Compliant.
•    Quality level is high.
•    Cost is economical.
•    Wavelength from 635 nm to 660 nm.
•    Rise and fall time is 0.5ns.

Technical Specification:
•    Operating Temperature: -10 ~ +40 ℃.
•    Storage Temperature: -15 ~ +85 ℃.
•    Output power (Po):  5 mW.
•    Normal and maximum operating voltage is 2.2 and 2.7 respectively.
•    Threshold current in minimum, normal and maximum condition are 15, 20 and 30mA.
•    Operating current is 65 to 80mA.
•    Beam Angle deviation: For both parallel and perpendicular condition it is in between -3 to 3 degrees

Beam divergence:-
•    For parallel condition it is in between 8 to 12 degree.
•    For perpendicular condition it is in between 23 to 32 degree.